Strained-layer superlattice buffers for high-quality heteroepilayers of ZnSe on GaAs
- 1 January 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 41-42, 534-538
- https://doi.org/10.1016/0169-4332(89)90117-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- OMVPE of Zn-based II–IV semiconductors using methylmercaptan as a novel sulfur sourceJournal of Crystal Growth, 1988
- Dislocation filtering in semiconductor superlattices with lattice-matched and lattice-mismatched layer materialsApplied Physics Letters, 1986
- Blue luminescence of a ZnSe-ZnS0.1Se0.9 strained-layer superlattice on a GaAs substrate grown by low-pressure organometallic vapor phase epitaxyApplied Physics Letters, 1985
- Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductorsJournal of Physics C: Solid State Physics, 1984
- MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layersElectronics Letters, 1984
- Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)Physica Status Solidi (a), 1984
- The optoelectronic properties of donors in organo-metallic grown zinc selenidePhysica B+C, 1983