Amorphous silicon p-n junction
- 15 January 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (2) , 105-107
- https://doi.org/10.1063/1.88658
Abstract
The preparation of an all-amorphous thin-film p-n junction is described. The a-Si films were produced by the glow discharge decomposition of silane, mixed with trace amounts of donor or acceptor impurities. The current-voltage characteristics of the junction were investigated in the range from 150 to 300 K.Keywords
This publication has 4 references indexed in Scilit:
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- Electronic transport and state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Photovoltaic effect and space charge capacitance of amorphous semiconductor-metal contactsJournal of Non-Crystalline Solids, 1972