The permeable junction base transistor with a new gate of extremely high doped p++ - GaAs
- 1 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 131-134
- https://doi.org/10.1016/0167-9317(92)90407-i
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Invited Paper Advances In The Technology For The Permeable Base TransistorPublished by SPIE-Intl Soc Optical Eng ,1987