Laser emission from stimulated spin-flip Raman scattering in (Cd,Mn)Se
- 1 October 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7) , 585-587
- https://doi.org/10.1063/1.93617
Abstract
Stimulated spin‐flip Raman scattering has been observed in the semimagnetic semiconductor Cd1−xMnxSe. g values as large as 170 were observed, allowing the spin‐flip frequency to be tuned by 20 meV with magnetic fields below B = 30 kG. A threshold intensity of less than 1 MW/cm2 was found. This threshold varies rapidly with pump wavelength, and peaks near the donor‐bound exciton energy. The tunability and gain coefficient are comparable to those in narrow‐gap semiconductors, such as InSb and (Hg,Cd)Te, under nonresonant conditions. Laser action is achieved for longitudinal pumping.Keywords
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