Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GainAsP/GainAsP quantum-well lasers

12 March 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (6) , 551-553
https://doi.org/10.1049/el:19920348

Abstract

The first theoretical evaluation is reported of the effect of biaxial compression on the quantum-well Ga_xIn_1-xAs/Ga_0.20InAs_0.45P and Ga_0.20In_0.50As_yP_1-y/Ga_0.20In_0.50As_0.45P_0.55 laser threshold current density. Reference is made to known experimental results, and a comparison carried out of the potentialities of the two types of laser.

Keywords

THRESHOLD CURRENT DENSITY
BIAXIAL COMPRESSION
GA0.2IN0.8ASYP1-Y-GA0.2IN0.8AS0.45P0.55
GAXIN1-XAS-GA0.2INAS0.45P
SEMICONDUCTOR LASERS
QUANTUM-WELL LASERS
COMPRESSIVELY STRAINED

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