The solution of over-erase problem controlling poly-Si grain size-modified scaling principles for flash memory

Publisher Website

17 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1994.383280

Abstract

No abstract available

This publication has 2 references indexed in Scilit:

A Poly-Buffered Face Technology for High Density Flash Memories
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1991
A NAND structured cell with a new programming technology for highly reliable 5 V-only flash EEPROM
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990