Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments
- 1 May 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 182-183, 223-229
- https://doi.org/10.1016/0029-554x(81)90691-1
Abstract
No abstract availableKeywords
Funding Information
- Deutsche Forschungsgemeinschaft
- Bundesministerium für Forschung und Technologie
This publication has 2 references indexed in Scilit:
- The determination of low dose boron implanted concentration profiles in silicon by the (n,α) reactionNuclear Instruments and Methods, 1975
- Technique for determining concentration profiles of boron impurities in substratesJournal of Applied Physics, 1972