0.98 µm multiquantum well tunnelling injectionlasers with ultra-high modulation bandwidths
- 29 August 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (18) , 1715-1717
- https://doi.org/10.1049/el:19961156
Abstract
GaAs-based 0.98 µm multiquantum well tunnelling injection lasers grown by MOVPE have been designed and fabricated. 200 µm long singlemode ridge lasers are characterised by Ith = 3 mA, f-3 dB = 45 GHz, f-3 dB(measured) = 43 GHz , and f-3 dB(max) = 84 GHz for pulsed operation. For CW operation the corresponding modulation bandwidths are 43 and 76 GHz, respectively.Keywords
This publication has 6 references indexed in Scilit:
- A "cold" InP-based tunneling injection laser with greatly reduced Auger recombination and temperature dependenceIEEE Photonics Technology Letters, 1995
- Dynamic linewidth of tunnelling injection laserElectronics Letters, 1994
- Properties of a tunneling injection quantum-well laser: Recipe for 'cold' device with a large modulation bandwidthIEEE Photonics Technology Letters, 1993
- Effect of state filling on the modulation response and the threshold current of quantum well lasersApplied Physics Letters, 1992
- Effect of nonlinear gain on modulation dynamics in quantum-well lasersElectronics Letters, 1989
- Extremely wide modulation bandwidth in a low threshold current strained quantum well laserApplied Physics Letters, 1988