Hot-Carrier InSb microwave modulation
- 1 November 1967
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 3 (11) , 504
- https://doi.org/10.1049/el:19670397
Abstract
The microwave power absorbed by a rod of p type InSb in Q band waveguide decreased by up to 9 dB when electric fields of up to 126 V/cm were applied to it, probably owing to a hot-carrier effect.Keywords
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