Dual-ion-beam sputter deposition of ZnO films

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Abstract
Physical properties of zinc oxide films deposited by dual‐ion‐beam sputtering are analyzed to point out the performance of this technique for the deposition of this material. The films are deposited by sputtering a zinc oxide target with an argon‐ion beam, while a second low‐energy beam, the assistance ion beam, impinges directly on the growing films. Results are presented for ZnO films deposited at room temperature with different oxygen/argon ratios in assistance ion beam and different sputtering ion‐beam currents. Elemental, structural, and electrical analyses have been performed on films. All the films show the typical crystallographic orientation, with the c axis perpendicular to the substrate. The oxygen percentage in the assistance ion beam plays an important role in controlling the electrical resistivity of the films.