4H-silicon carbide mesfet with 2.8 W/mm rf power density

• 25 August 2005
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 27-28
• https://doi.org/10.1109/drc.1994.1009401

Abstract

Keywords

• MESFETS
• RADIO FREQUENCY
• POWER GENERATION
• SILICON CARBIDE
• THERMAL CONDUCTIVITY
• ELECTRON MOBILITY
• BREAKDOWN VOLTAGE
• DOPING
• SCATTERING PARAMETERS
• CUTOFF FREQUENCY