The effect of channel implants on MOS transistor characterization
- 1 December 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (12) , 2501-2509
- https://doi.org/10.1109/t-ed.1987.23341
Abstract
MOS device characterization involves the extraction of parameters from electrical measurements. A nonuniform channel doping profile can make such characterization ambiguous since device parameters are usually based upon a uniform doping profile model. In this paper, we solve the one-dimensional Poisson's equation for several doping profiles and show the impact of a nonuniform doping profile on the threshold surface potential, threshold voltage, normal field mobility degradation, and transconductance.Keywords
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