Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10∼2 to 10-6 Ω-cm2) which changed with annealing.Keywords
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