Transition rates for acoustic-phonon—hole scattering inp-type silicon with nonparabolic bands

Transition rates for acoustic-phonon—hole interactions in Si are calculated using the deformation-potential scattering theory of Tiersten. No assumptions of band parabolicity have been made. The transition rates incorporating the full nonspherical-nonparabolic nature of the Si band structure have been calculated numerically. As a result, the transition rates are strikingly dependent on energy as well as on incident and scattered directions. We have also found for intraband scattering, as Tiersten did for Ge, that light holes scatter more strongly in the forward direction and heavy holes scatter more strongly in the backward direction when the forward scattering direction is chosen from the $〈100〉$ or $〈111〉$ symmetry set. We have also considered the $〈110〉$ symmetry set and have found here that as energy increases the trend mentioned above for intraband scattering is no longer true. As a check on our computational procedure we have calculated transition rates for Ge and compared our results to those of Tiersten. The two sets of values are in close agreement.