Submicron processing of InAs based quantum wells: A new, highly selective wet etchant for AlSb
- 17 March 1997
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (11) , 1435-1437
- https://doi.org/10.1063/1.118599
Abstract
We describe a processing technology for patterning InAs/AlSb heterostructures far in the submicron regime. The processing is based on a new, highly selective wet etchant for AlSb. We discuss the electrical characterization of narrow ballistic channels (down to ≈140 nm width) realized with present technology, and demonstrate that the processing preserves the high mobility of the material.Keywords
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