Subthreshold current ion GaAs MESFETs
- 1 March 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (3) , 128-129
- https://doi.org/10.1109/55.2064
Abstract
The authors present experimental data that show that the drain-to-source voltage dependence of the subthreshold current in GaAs MESFETs is determined by the variation of threshold voltage with drain-source voltage and not by Schottky-barrier lowering. This model, incorporating gate-to-drain and gate-to-source diode currents, is shown to be in good agreement with measured data. The model is incorporated into a GaAs circuit simulator and is suitable for GaAs IC design.Keywords
This publication has 2 references indexed in Scilit:
- A subthreshold current model for GaAs MESFET'sIEEE Electron Device Letters, 1987
- Analysis of noise margin and speed of GaAs MESFET DCFL using UM-SPICEIEEE Transactions on Electron Devices, 1986