Advances in remote plasma-enhanced chemical vapor deposition for low temperature In situ hydrogen plasma clean and Si and Si1-xGex epitaxy
- 1 January 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (1) , 65-74
- https://doi.org/10.1007/bf02670922
Abstract
No abstract availableKeywords
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