Characterisation of InGaAsP/InP ITG-DFB-BCRW lasers with contacted surface grating for lambda =1.55 µm

1 October 1994

journal article
Published by Institution of Engineering and Technology (IET) in IEE Proceedings - Optoelectronics

Vol. 141 (5) , 323-326
https://doi.org/10.1049/ip-opt:19941338

Abstract

InGaAsP/InP ITG-DFB-BCRW lasers with a substantial simplified fabrication process, made by one-step liquid phase epitaxy (LPE) without corrugation overgrowth, were characterised. A continuous wave (CW) threshold current of 56 mA and a sidemode suppression ratio (SMSR) of 40 dB, as well as a linewidth of 15 MHz, where achieved at room temperature. The 3 dB-modulation bandwidth is in excess of 5 GHz.

Keywords

5 GHZ
MODULATION BANDWIDTH
FABRICATION PROCESS
56 MA
1.55 MUM
LINEWIDTH
CHARACTERISATION
INGAASP-INP
CONTINUOUS WAVE THRESHOLD CURRENT
ONE-STEP LIQUID PHASE EPITAXY
SIDEMODE SUPPRESSION RATIO
CONTACTED SURFACE GRATING
INGAASP/INP INTEGRATED TWIN GUIDE DISTIBUTED FEEDBACK BRIDGE CONTACTED RIDGE WAVEGUIDE LASERS
ROOM TEMPERATURE

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