Vapor Phase Epitaxial Growth of ZnSe Using Zinc and Selenium as Source Materials

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Abstract
Epitaxial layers of ZnSe have been grown on GaAs substrates at temperatures of 550–850°C in a hydrogen flow system using zinc and selenium as the source materials. The layers on the (111)Ga faces show flat-topped triangular growth patterns and have the twinned zincblende structure. The layers on the (1̄1̄1̄)As faces grown at temperatures above 700°C show triangular growth pyramids and have the twin-free zincblende structure, while those grown at temperatures below 700°C have the twinned zincblende structure. The photoluminescence spectrum at 80 K consists of the exitonic band at 2.79 eV, the free-to-bound band at 2.70 eV and deep-level emission bands at 2.2 and 2.0 eV. The deep-level emission bands decrease in intensity as the growth temperature is lowered.

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