Low-noise pseudomorphic dual-gate cascode HEMTs with extremely high gain
- 1 February 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 2 (2) , 46-48
- https://doi.org/10.1109/75.122405
Abstract
Quarter-micron InGaAs-GaAs dual-gate HEMTs connected as a cascode MMIC in a compact manner have been fabricated and investigated. The devices show a high output impedance and a very low feedback capacitance, resulting in a high-voltage gain factor /sub gm///sub gd/ of 125 and a C/sub gs//C/sub gd/ ratio of 45. The current gain cutoff frequency f/sub T/ is 45 GHz and the maximum stable gain is 23.5 dB at 10 GHz and 19 dB at 20 GHz. The pseudomorphic cascode HEMTs show a low-noise figure of 1.1 dB with an associated gain of 22 dB at 10 GHz, at 18 GHz the minimum noise figure is 1.9 dB with 16-dB gain.Keywords
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