Ultraviolet detectors in thin sputtered ZnO films
- 15 August 1986
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 25 (16) , 2764-2767
- https://doi.org/10.1364/ao.25.002764
Abstract
Ultraviolet-sensitive photodiodes have been made using the Schottky barrier formed in the contact layer between a thin sputtered layer of ZnO and Au. The sputtering parameters for the ZnO layer were optimized. The IV characteristics and the sensitivity spectra of the ZnO–Au photodiodes were investigated.Keywords
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