The evidence for interaction of the N-N pair with oxygen in Czochralski silicon
- 15 March 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (6) , 3775-3777
- https://doi.org/10.1063/1.348476
Abstract
Evidence for interaction between the N-N pair and interstitial O in N-doped Czochralski silicon has been presented by studying the annealing behavior of the corresponding IR absorption bands.This publication has 4 references indexed in Scilit:
- Nitrogen-oxygen complexes in Czochralski-siliconApplied Physics A, 1988
- The Nature of Nitrogen-Oxygen Complexes in SiliconJapanese Journal of Applied Physics, 1988
- Calibration curve for infrared spectrophotometry of nitrogen in siliconApplied Physics Letters, 1985
- Effects of nitrogen on dislocation behavior and mechanical strength in silicon crystalsJournal of Applied Physics, 1983