High-performance Deep Submicron Mosts With Polycrystalline-(Si, Ge) Gates

• 24 August 2005
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• No. 1524766X,p. 311-315
• https://doi.org/10.1109/vtsa.1997.614918

Abstract

Keywords

• CMOS PROCESS
• DOPING
• MOSFETS
• SUBTHRESHOLD CURRENT
• THRESHOLD VOLTAGE
• OPTICAL FILMS
• RAPID THERMAL ANNEALING
• LABORATORIES
• MANUFACTURING PROCESSES
• SCATTERING