Low Threshold Current Density Operation of 1.16 µm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate
- 15 May 2002
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 41 (Part 2, No) , L562-L564
- https://doi.org/10.1143/jjap.41.l562
Abstract
We demonstrate highly strained GaInAs/GaAs quantum well (QW) vertical cavity surface emitting lasers (VCSELs) emitting at 1.16 µm with a low threshold current density and high efficiency in the 1.2-µm-wavelength band. The VCSEL structure was monolithically grown on a (100) n-type GaAs substrate by low-pressure metalorganic vapor phase epitaxy (MOVPE). The threshold current is 3 mA for a 10×10 µm2 oxide aperture device, corresponding to a threshold current density of 3 kA/cm2. The maximum output power ismore than 2 mW. The maximum CW operating temperature is 85°C and the threshold current is almost constant in temperature range of 25–75°C.Keywords
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