A New Self-Aligned Framed Mask Method for Selective Oxidation

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Abstract
A new selective oxidation method, which realizes fine isolation width for MOS LSIs, has been developed. The oxidation mask in this method has a Si3N4 frame formed at a perimeter of a conventional mask pattern by self-aligned technique. This technique is composed of deposition step of Si3N4 film to cover the conventional mask and dry etching step of this film to form the frame without a photoresist pattern. Bird's beak extent is suppressed to less than 300 nm. Dislocation generation in silicon substrate is also suppressed in this framed mask method. Bird's beak suppression brings about extention in an effective device area and realizes a transistor with effective channel width 1.0 µm wider than that in the conventional mask method. The p-n junction prepared by this new method exhibits as small leakage current as that by the conventional method.

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