Growth of As overlayers on vicinal Si(100) surfaces

• 1 July 1991
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 9  (4) , 2423-2426
• https://doi.org/10.1116/1.585714

Abstract

Keywords

• ARSENIC
• CRYSTAL GROWTH
• ENERGY LEVELS
• GALLIUM ARSENIDE
• FIRST PRINCIPLE