Noise in semiconductor laser amplifiers with quantum box structure
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (1) , 39-41
- https://doi.org/10.1109/68.68041
Abstract
The low-noise properties of a quantum-box traveling-wave semiconductor laser amplifier (QB-TW-SLA) are discussed. The gain and population-inversion parameter of a quantum-box structure are precisely expressed using density matrix theory. Due to sharp gain characteristics as well as a small population inversion parameter, dominant two-beat noise is significantly reduced, even in a solitary device without a narrow bandpass filter. The noise figure can be reduced to 3.5 dB.<>Keywords
This publication has 8 references indexed in Scilit:
- Threshold current density of GaInAsP/InP quantum-box lasersIEEE Journal of Quantum Electronics, 1989
- Gain and the threshold of three-dimensional quantum-box lasersIEEE Journal of Quantum Electronics, 1986
- Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasersIEEE Journal of Quantum Electronics, 1985
- Chapter 3 Optical Amplification by Semiconductor LasersPublished by Elsevier ,1985
- Noise in an AlGaAs semiconductor laser amplifierIEEE Journal of Quantum Electronics, 1982
- Receiver Design for Digital Fiber Optic Communication Systems, IBell System Technical Journal, 1973
- Measurement of amplification in a GaAs injection laserPhysics Letters, 1963
- Fluctuations in Amplification of Quanta with Application to Maser AmplifiersJournal of the Physics Society Japan, 1957