Electronic states of BaPb1xBixO3 in the semiconducting phase investigated by optical measurements

Abstract
The semiconducting BaPb1x Bix O3 (0.35<x≤1) is investigated in detail by optical measurements. The optical spectrum shows that BaPb1x Bix O3 has a clear optical gap over the whole semiconducting compositional range. It is clearly shown by resonant Raman scattering measurements that the origin of this gap is a charge-density wave (CDW) accompanied by the breathing-mode distortion. No apparent effect of Pb substitution can be observed in the reflectivity spectra for the sample with x>0.7. For x≤0.7, the CDW gap decreases with x and simultaneously the absorption tail extends into the gap. This spectral behavior can be well interpreted in terms of the recently proposed theoretical model with emphasis on a local CDW and/or a substantial energy difference between Pb and Bi sites arising from the strong electron-phonon interaction. Thus it can be concluded that the strong electron-phonon interaction plays an essential role in the semiconducting phase of this material as well as in the metallic phase.

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