Ripple Technique; a Novel Non-Contact Wafer Emissivity and Temperature Method for RTP
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
A novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.Keywords
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