Resonant-tunneling transfer times between asymmetric GaAs/As double quantum wells
- 15 June 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (17) , 12295-12298
- https://doi.org/10.1103/physrevb.41.12295
Abstract
Electron tunneling through the barrier in asymmetric double-quantum-well structures is investigated by time-resolved picosecond luminescence spectroscopy. Change from nonresonant to resonant tunneling is acheived with a perpendicular electric field. Energetic alignment of electron subbands in the two wells strongly enhances tunneling transfer rates. The resonant transfer times decrease strongly with barrier thickness. The wells are coupled at resonance by energy-conserving scattering processes between states localized in a single well. The buildup of delocalized coherent states at resonance would lead to much shorter transfer times.Keywords
This publication has 26 references indexed in Scilit:
- Tunnelling and Relaxation in Coupled Quantum WellsEurophysics Letters, 1990
- Observation of space-charge bulk-up and thermalisation in an asymmetric double-barrier resonant tunnelling structureJournal of Physics: Condensed Matter, 1989
- Time-resolved Raman measurements of intersubband relaxation in GaAs quantum wellsPhysical Review Letters, 1989
- Electron transport in a disordered semiconductor superlatticePhysical Review B, 1989
- Resonant and non-resonant tunneling in multi quantum well structuresSuperlattices and Microstructures, 1989
- Coherent versus incoherent resonant tunneling and implications for fast devicesSuperlattices and Microstructures, 1989
- Real space transfer of two dimensional electrons in double quantum well structuresSolid-State Electronics, 1988
- A bird's-eye view on the evolution of semiconductor superlattices and quantum wellsIEEE Journal of Quantum Electronics, 1986
- Lifetime Enhancement of Two-Dimensional Excitons by the Quantum-Confined Stark EffectPhysical Review Letters, 1985
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985