Optoelectronic VLSI switching chip with greaterthan 1 Tbit/s potential optical I/O bandwidth

8 May 1997

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 33 (10) , 894-895
https://doi.org/10.1049/el:19970567

Abstract

The authors describe an optoelectronic switching chip with 1024 differential optical inputs and 1024 differential optical outputs with individual channels tested above 600 Mbit/s. The technology for the chip consists of 850 nm GaAs/AlGaAs multiquantum well (MQW) detectors and modulators, flip-chip bonded onto silicon CMOS with substrate removal to allow access to the optical devices.

Keywords

This publication has 2 references indexed in Scilit:

1-Gb/s two-beam transimpedance smart-pixel optical receivers made from hybrid GaAs MQW modulators bonded to 0.8 μm silicon CMOS
IEEE Photonics Technology Letters, 1996
3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuit
IEEE Photonics Technology Letters, 1995