Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering
- 25 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (17) , 1371-1373
- https://doi.org/10.1063/1.99119
Abstract
Data are presented on high-quality buried heterostructure lasers fabricated by laser-assisted disordering of GaAs-AlGaAs quantum well heterostructures. The typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with 34 dB attenuation of longitudinal side modes.Keywords
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