Precipitation of cobalt in silicon studied by Mössbauer spectroscopy

This publication has 22 references indexed in Scilit:

• Solid Solubility of Cobalt in Silicon
  Japanese Journal of Applied Physics, 1977
• Entropy of ionization and temperature variation of ionization levels of defects in semiconductors
  Physical Review B, 1976
• Self‐ and impurity diffusion in Ge and Si
  Physica Status Solidi (b), 1975
• The 57Fe Mössbauer spectra in copper doped silicon
  Physics Letters A, 1970
• Recombination Mechanisms
  Physica Status Solidi (b), 1968
• Diffusion Mechanisms and Point Defects in Silicon and Germanium
  Physica Status Solidi (b), 1968
• Mössbauer effect isomer shift of Fe57 in silicon and germanium
  Journal of Physics and Chemistry of Solids, 1962
• Electron Spin Resonance in Semiconductors
  Published by Elsevier ,1962
• Fe³⁺ ion Lifetime in CoO Deduced from the Auger and Mössbauer Effects
  Physica Status Solidi (b), 1962
• Solid Solubilities of Impurity Elements in Germanium and Silicon*
  Bell System Technical Journal, 1960