Reflection high-energy electron diffraction studies of InSe and GaSe layered compounds grown by molecular beam epitaxy
- 1 April 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (7) , 3256-3259
- https://doi.org/10.1063/1.350972
Abstract
We have investigated the molecular beam homoepitaxial and heteroepitaxial growth of InSe and GaSe III–VI compounds semiconductors. In situ reflection high‐electron energy diffraction measurements reveal that two‐dimensional epitaxial growth occurs on (00.1) oriented substrates, at substrate temperatures ranging from 300 to 350 °C. A scanning electron microscopy study of the films surfaces has been performed to correlate their morphology to the growth conditions.This publication has 8 references indexed in Scilit:
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