FORMATION OF HIGH ENERGY MICROBEAMS AND THEIR APPLICATION TO MICROELECTRONICS

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Abstract
Scanning nuclear microprobes using Rutherford backscattering (RBS) and particle-induced X-ray emission (PIXE) with light ions have been formed using variable objective slits and a magnetic quadrupole doublet. Beam optics, focusing techniques, factors limiting the minimum beam-spot size, and data acquisition systems are discussed. Two- and three-dimensional RBS mapping and channeling contrast mapping of processed semiconductor layers such as multilayered wiring and focused ion-implanted layers are demonstrated. Problems with microbeam analysis such as radiation damages due to the probe beams are discussed.

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