A unified bipolar device model
- 1 January 1983
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper describes a compact model for bipolar transistors which includes a unified representation of quasi-saturation effects. The formulation of this model has been verified with results from physical simulations of a high voltage bipolar transistor. Excellent agreement between detailed physical simulations and the compact model is observed over a wide range of operating conditions for dc and ac small-signal characteristics.Keywords
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