Magnetic field control of reactive plasma etching
- 1 September 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (5) , 393-394
- https://doi.org/10.1063/1.91136
Abstract
The application of a magnetic field to control the spatial distribution of chemical species in reactive plasma etching produces a situation in which either etching or deposition can occur. In a low‐voltage hot‐filament triode configuration in which the plasma is confined by an externally applied magnetic field, Si samples are subjected to a CF4 plasma. Etching or deposition of a cross‐linked fluorocarbon polymer can occur, depending on the position of the sample with respect to the core of the discharge. These results are generally applicable to all reactive plasma‐etching reactors.Keywords
This publication has 1 reference indexed in Scilit:
- Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and Its CompoundsIBM Journal of Research and Development, 1979