Photocurrent and photoluminescence measurements in the near-band-edge region of 6H GaN
- 15 April 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (8) , 4397-4402
- https://doi.org/10.1063/1.367232
Abstract
The optical transitions near the band edge in molecular-beam epitaxy grown 6H GaN films on sapphire have been studied by photocurrent (PC) and photoluminescence (PL) measurements. The low-temperature PC spectra show well-resolved free-exciton transitions, which allow us to determine the and free-exciton energies and the corresponding direct band gaps. PL measurements were performed to check the assignment of the excitonic transitions and to derive strain-dependent excitonic parameters from the energetic position of the free exciton transition, which serve as an input to the fit function for the PC spectra. Variation of the sample temperature between 5 and 300 K allows us to extract the temperature dependence of the band gap.
This publication has 20 references indexed in Scilit:
- Oscillator strengths for optical band-to-band processes in GaN epilayersPhysical Review B, 1996
- On Surface Cracking of Ammonia for MBE Growth of GaNMRS Proceedings, 1996
- Effects of Strain Fields on Excitons and Phonons in Wurtzite GaN EpilayersMRS Proceedings, 1996
- Electronic Structure of Biaxially-Strained Wurtzite Crystals GaN and AlNMRS Proceedings, 1996
- Volume-expansion-induced lattice instability and solid-state amorphizationPhysical Review B, 1996
- Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetryPhysical Review B, 1995
- Strain Effects in GaN on Sapphire: Towards a Quantitative ComprehensionMRS Proceedings, 1995
- Pressure and Temperature Dependence of the Absorption Edge in GaNJournal of Applied Physics, 1971
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967