Room temperature 632.7 nm CW operation of AlGaInP strained multiquantum well lasers grown on (100) GaAs

26 March 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (7) , 628-629
https://doi.org/10.1049/el:19920396

Abstract

Room temperature (25°C) 632.7 nm continuous wave operation of AlGaInP strained multiquantum well lasers has been achieved on (100) just oriented GaAs substrate for the first time. The device operated in CW mode up to 38°C.

Keywords

5 TO 38 DEGC
(100) SUBSTRATE
GAAS
632.7 NM
STRAINED MULTIQUANTUM WELL LASERS
25 DEGC
CW MODE
ROOM TEMPERATURE CW OPERATION
ALGAINP-GAAS

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