Fabrication of GaAs arrowhead-shaped quantum wires by metalorganic chemical vapor deposition selective growth
- 4 January 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (1) , 49-51
- https://doi.org/10.1063/1.109614
Abstract
We fabricated GaAs arrowhead‐shaped quantum wires utilizing both the selective growth technique and the difference in the stabilized crystal facet between GaAs and Al0.4Ga0.6As; the stabilized facet of the GaAs layer is (111)A and that of the Al0.4Ga0.6As layer is (311)A. A systematic change in the size of the quantum wire exhibits blue shifts of the photoluminescence peak, which is due to enhancement of the two‐dimensional quantum confinement effect.Keywords
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