The stability of polycrystalline silicon thin film resistors measured using excess noise
- 1 January 1989
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 29 (4) , 543-544
- https://doi.org/10.1016/0026-2714(89)90342-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Growth and Characterization of Polycrystalline SiliconJournal of the Electrochemical Society, 1973
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971