Time dependence of dopant diffusion in δ-doped Si films and properties of Si point defects
- 17 January 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (3) , 312-314
- https://doi.org/10.1063/1.111189
Abstract
The diffusion of Sb and B in thin Si films grown by low temperature molecular beam epitaxy is investigated in the temperature range 750–900 °C for times of 0.25–60 h. The small spatial extent of the initial δ-function-like dopant profiles allows the detection of very small diffusional displacements. The dopant atoms are used as tracers of Si point defects (vacancies and self-interstitials). Diffusion of Sb is found to be enhanced relative to equilibrium values, while that of B is retarded. We propose a model based on an initial supersaturation of vacancies. Matching this model to the experimental data allows the extraction of the vacancy diffusivity, the activation energy of vacancy formation, and the recombination lifetime of interstitials. The results show that interstitial and vacancy populations cannot be considered independent at low temperature, as has been previously suggested.Keywords
This publication has 21 references indexed in Scilit:
- Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivitiesApplied Physics Letters, 1993
- Doping of Si thin films by low-temperature molecular beam epitaxyJournal of Applied Physics, 1993
- Delta doping in siliconCritical Reviews in Solid State and Materials Sciences, 1993
- Defect-coupled diffusion at high concentrationsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Determination of the Retarded Diffusion of Antimony by SIMS Measurements and Numerical SimulationsJournal of the Electrochemical Society, 1986
- Monovacancy Formation Enthalpy in SiliconPhysical Review Letters, 1986
- Point defects, diffusion processes, and swirl defect formation in siliconApplied Physics A, 1985
- An entropy barrier against vacancy-interstitial recombination in siliconSolid State Communications, 1983
- Theoretical Treatment of the Kinetics of Diffusion-Limited ReactionsPhysical Review B, 1957