High performance heterojunction bipolar transistors grown by molecular-beam epitaxy using novel growth method
- 1 May 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (3) , 972-975
- https://doi.org/10.1116/1.586902
Abstract
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