Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth
- 18 January 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (3) , 218-220
- https://doi.org/10.1063/1.99524
Abstract
The deposition of sodium sulfide nonahydrate (Na2S⋅9H2O) onto mesa AlGaAs/GaAs heterostructure bipolar transistors confers near‐ideal transport characteristics to the device structure. By reducing the GaAs surface recombination velocity, sulfide regrowth leads to current gain ( β) almost independent of collector current, and β>1 at collector current density below 5×10−7 A/cm−2. Furthermore, we obtain by passivation an emitter junction ideality factor of n=1.03.Keywords
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