Schottky barriers effects on the dielectric behavior of the Nb-Nb2O5-Nb system
- 16 October 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 37 (2) , K177-K181
- https://doi.org/10.1002/pssa.2210370261
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Theory and analyses of the ac characteristics of defect thin-film insulatorsJournal of Applied Physics, 1976
- Dielectric properties of amorphous Nb2O5 thin filmsThin Solid Films, 1975
- Sur les propriétés diélectriques en courant alternatif de structures or-monoxyde de silicium-orThin Solid Films, 1974
- On the frequency dependence of conductivity in amorphous solidsPhilosophical Magazine, 1971
- Electronic Conduction in Amorphous SemiconductorsJournal of Vacuum Science and Technology, 1971
- ANODIC OXIDE FILMS ON NIOBIUM: THICKNESS, DIELECTRIC CONSTANT, DISPERSION, REFLECTION MINIMA, FORMATION FIELD STRENGTH, AND SURFACE AREACanadian Journal of Chemistry, 1960