Langevin recombination of drifting electrons and holes in stabilized a-Se (Cl-doped a-Se: 0.3% As)
- 1 January 1995
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 71 (1) , 91-96
- https://doi.org/10.1080/01418639508240295
Abstract
The double flash technique of F. K. Dolezalek and W. E. Spear (1975, J. Phys. Chem. Solids, 36, 819) for the measurement of recombination coefficients was used to determine the recombination mechanism of drifting electrons and holes in stabilized a-Se (Cl-doped a-Se: 0.3% As). The experiments show that the recombination process follows the Langevin mechanism.Keywords
This publication has 4 references indexed in Scilit:
- X-ray sensitivity of halogenated a-Se:As photoreceptors for electroradiographyJournal of Non-Crystalline Solids, 1991
- An interrupted field time-of-flight (IFTOF) technique in transient photoconductivity measurementsReview of Scientific Instruments, 1990
- Time-of-flight drift mobility measurements on chlorine-doped amorphous selenium filmsJournal of Physics D: Applied Physics, 1985
- Carrier recombination in orthorhombic sulphurJournal of Physics and Chemistry of Solids, 1975