Breakdown voltage modeling in mesa power devices

This publication has 7 references indexed in Scilit:

• A general method for predicting the avalanche breakdown voltage of negative bevelled devices
  IEEE Transactions on Electron Devices, 1976
• Influence of bevel angle and surface charge on the breakdown voltage of negatively beveled diffused p-n junctions
  Solid-State Electronics, 1975
• Depletion layer characteristics at the surface of beveled high-voltage P-N junctions
  IEEE Transactions on Electron Devices, 1973
• Field distribution near the surface of beveled P-N junctions in high-voltage devices
  IEEE Transactions on Electron Devices, 1973
• Measurement of the ionization rates in diffused silicon p-n junctions
  Solid-State Electronics, 1970
• Control of electric field at the surface of P-N junctions
  IEEE Transactions on Electron Devices, 1964
• Diffused Junction Depletion Layer Calculations
  Bell System Technical Journal, 1960