Interface States and Fixed Charges in MNOS Structures with APCVD and Plasma Silicon Nitride
- 1 July 1984
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 131 (7) , 1679-1683
- https://doi.org/10.1149/1.2115936
Abstract
The net positive charge density and the interface state density of MNOS structures on p‐Si (100) with APCVD and plasma silicon nitride is studied as a function of the nitride deposition temperature and the postdeposition annealing temperature. For APCVD silicon nitride, a decrease of is accompanied by an increase of with increasing deposition and annealing temperature. Electron irradiation (30 keV and dosage) did not affect , whereas was increased for nitride films deposited below 800°C. For plasma silicon nitride, both and decreased with deposition and annealing temperature up to 450°C. Very low interface state densities could be achieved. These low values are due to the influence of hydrogen incorporated in the PECVD silicon nitride films. Very high positive charge densities (>1013 cm−2) could be obtained by cesium contamination of the plasma nitride films.Keywords
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