Electrochemical Deposition of Copper on n‐Si/TiN

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Abstract
In this paper we report on the electrochemical deposition of copper onto n‐type silicon with a 30 nm TiN barrier film. We show that the mechanism of nucleation and growth is dependent on the applied potential. At potentials more negative than −0.35 V, instantaneous nucleation of hemispherical clusters is followed by diffusion‐limited growth. In this potential regime, the nucleus density is essentially constant at about . At potentials more positive than −0.35 V, the nucleation and growth kinetics are more complex, and clusters consisting of several nuclei are formed. The cluster density decreases to about at −0.05 V. © 1999 The Electrochemical Society. All rights reserved.

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