Strained GaInAs-base hot electron transistor
- 3 March 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (5) , 279-280
- https://doi.org/10.1049/el:19880187
Abstract
A hot electron transistor (HET) which has a strained GaInAs base and a graded AlGaAs collector barrier was grown on a GaAs substrate by metalorganic chemical vapour deposition. In this device, the difference in energy levels between the L-band minima of the base and the top of the collector barrier is wider than that in GaAs-base HETs, which results in a common emitter current gain β (collector current/base current) as high as 30.Keywords
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